Vishay Siliconix SISH615ADN-T1-GE3

Номер детали
SISH615ADN-T1-GE3
Производитель
Vishay Siliconix
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
PowerPAK® 1212-8SH
Технические
Нахождение ЧипаSISH615ADN-T1-GE3.pdf
Описание
MOSFET P-CH 20V 22.1A/35A PPAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order SISH615ADN-T1-GE3 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that SISH615ADN-T1-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SISH615ADN-T1-GE3. All suppliers must pass our qualification reviews before they can publish their products including SISH615ADN-T1-GE3 on Нахождение Чипа; we pay more attention to the channels and quality of SISH615ADN-T1-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SISH615ADN-T1-GE3 price and inventory displayed accurate?

The price and inventory of SISH615ADN-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SISH615ADN-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SISH615ADN-T1-GE3 we delivered, we will accept the replacement or return of the SISH615ADN-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SISH615ADN-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SISH615ADN-T1-GE3 pin diagram, SISH615ADN-T1-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение SIUD403ED-T1-GE3 SISH615ADN-T1-GE3 SI4401FDY-T1-GE3 SI7155DP-T1-GE3 SIA469DJ-T1-GE3
Номер детали SIUD403ED-T1-GE3 SISH615ADN-T1-GE3 SI4401FDY-T1-GE3 SI7155DP-T1-GE3 SIA469DJ-T1-GE3
Производитель Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series TrenchFET® Gen III TrenchFET® Gen III TrenchFET® Gen III TrenchFET® Gen III TrenchFET® Gen III
ProductStatus Active Active Active Active Active
FETType P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V 20 V 20 V 20 V 20 V
Current-ContinuousDrain(Id)@25°C 22.1A (Ta), 35A (Tc) 22.1A (Ta), 35A (Tc) 22.1A (Ta), 35A (Tc) 22.1A (Ta), 35A (Tc) 22.1A (Ta), 35A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V 2.5V, 10V
RdsOn(Max)@IdVgs 4.4mOhm @ 20A, 10V 4.4mOhm @ 20A, 10V 4.4mOhm @ 20A, 10V 4.4mOhm @ 20A, 10V 4.4mOhm @ 20A, 10V
Vgs(th)(Max)@Id 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 183 nC @ 10 V 183 nC @ 10 V 183 nC @ 10 V 183 nC @ 10 V 183 nC @ 10 V
Vgs(Max) ±12V ±12V ±12V ±12V ±12V
InputCapacitance(Ciss)(Max)@Vds 5590 pF @ 10 V 5590 pF @ 10 V 5590 pF @ 10 V 5590 pF @ 10 V 5590 pF @ 10 V
FETFeature - - - - -
PowerDissipation(Max) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SISH615ADN-T1-GE3 Актуальная информация

Включенные следующие детали "SISH615ADN-T1-GE3" ISSI, Интегрированные Силиконовые Решения Инк SISH615ADN-T1-GE3.

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