STMicroelectronics STB12NM50FDT4

Номер детали
STB12NM50FDT4
Производитель
STMicroelectronics
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
D2PAK
Технические
Нахождение ЧипаSTB12NM50FDT4.pdf
Описание
MOSFET N-CH 500V 12A D2PAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order STB12NM50FDT4 on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that STB12NM50FDT4 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the STB12NM50FDT4. All suppliers must pass our qualification reviews before they can publish their products including STB12NM50FDT4 on Нахождение Чипа; we pay more attention to the channels and quality of STB12NM50FDT4 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the STB12NM50FDT4 price and inventory displayed accurate?

The price and inventory of STB12NM50FDT4 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of STB12NM50FDT4?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STB12NM50FDT4 we delivered, we will accept the replacement or return of the STB12NM50FDT4 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STB12NM50FDT4.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STB12NM50FDT4 pin diagram, STB12NM50FDT4 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение STW45NM50FD STB11NM60FDT4 STP12NM50FD STW14NM50FD STB12NM50FDT4
Номер детали STW45NM50FD STB11NM60FDT4 STP12NM50FD STW14NM50FD STB12NM50FDT4
Производитель STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series FDmesh™ FDmesh™ FDmesh™ FDmesh™ FDmesh™
ProductStatus Obsolete Obsolete Obsolete Obsolete Obsolete
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 500 V 500 V 500 V 500 V 500 V
Current-ContinuousDrain(Id)@25°C 12A (Tc) 12A (Tc) 12A (Tc) 12A (Tc) 12A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 400mOhm @ 6A, 10V 400mOhm @ 6A, 10V 400mOhm @ 6A, 10V 400mOhm @ 6A, 10V 400mOhm @ 6A, 10V
Vgs(th)(Max)@Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
GateCharge(Qg)(Max)@Vgs 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V 12 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 25 V 1000 pF @ 25 V 1000 pF @ 25 V 1000 pF @ 25 V 1000 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 160W (Tc) 160W (Tc) 160W (Tc) 160W (Tc) 160W (Tc)
OperatingTemperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

STB12NM50FDT4 Актуальная информация

Включенные следующие детали "STB12NM50FDT4" ISSI, Интегрированные Силиконовые Решения Инк STB12NM50FDT4.

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