STMicroelectronics STP42N60M2-EP

Номер детали
STP42N60M2-EP
Производитель
STMicroelectronics
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-220
Технические
Нахождение ЧипаSTP42N60M2-EP.pdf
Описание
MOSFET N-CH 600V 34A TO220
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order STP42N60M2-EP on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that STP42N60M2-EP is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the STP42N60M2-EP. All suppliers must pass our qualification reviews before they can publish their products including STP42N60M2-EP on Нахождение Чипа; we pay more attention to the channels and quality of STP42N60M2-EP products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the STP42N60M2-EP price and inventory displayed accurate?

The price and inventory of STP42N60M2-EP fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of STP42N60M2-EP?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STP42N60M2-EP we delivered, we will accept the replacement or return of the STP42N60M2-EP only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STP42N60M2-EP.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STP42N60M2-EP pin diagram, STP42N60M2-EP datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение STP42N60M2-EP STD15N60M2-EP STP15N60M2-EP STL25N60M2-EP STL15N60M2-EP
Номер детали STP42N60M2-EP STD15N60M2-EP STP15N60M2-EP STL25N60M2-EP STL15N60M2-EP
Производитель STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Packaging Tube Tube Tube Tube Tube
Series MDmesh™ M2-EP MDmesh™ M2-EP MDmesh™ M2-EP MDmesh™ M2-EP MDmesh™ M2-EP
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V 600 V 600 V 600 V 600 V
Current-ContinuousDrain(Id)@25°C 34A (Tc) 34A (Tc) 34A (Tc) 34A (Tc) 34A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 87mOhm @ 17A, 10V 87mOhm @ 17A, 10V 87mOhm @ 17A, 10V 87mOhm @ 17A, 10V 87mOhm @ 17A, 10V
Vgs(th)(Max)@Id 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA 4.75V @ 250µA
GateCharge(Qg)(Max)@Vgs 55 nC @ 10 V 55 nC @ 10 V 55 nC @ 10 V 55 nC @ 10 V 55 nC @ 10 V
Vgs(Max) ±25V ±25V ±25V ±25V ±25V
InputCapacitance(Ciss)(Max)@Vds 2370 pF @ 100 V 2370 pF @ 100 V 2370 pF @ 100 V 2370 pF @ 100 V 2370 pF @ 100 V
FETFeature - - - - -
PowerDissipation(Max) 250W (Tc) 250W (Tc) 250W (Tc) 250W (Tc) 250W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

STP42N60M2-EP Актуальная информация

Включенные следующие детали "STP42N60M2-EP" ISSI, Интегрированные Силиконовые Решения Инк STP42N60M2-EP.

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