Toshiba Semiconductor and Storage TPN4R712MD,L1Q

Номер детали
TPN4R712MD,L1Q
Производитель
Toshiba Semiconductor and Storage
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
8-TSON Advance (3.1x3.1)
Технические
Нахождение ЧипаTPN4R712MD,L1Q.pdf
Описание
MOSFET P-CH 20V 36A 8TSON
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

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We have a professional and experienced quality control team to strictly verify and test the TPN4R712MD,L1Q. All suppliers must pass our qualification reviews before they can publish their products including TPN4R712MD,L1Q on Нахождение Чипа; we pay more attention to the channels and quality of TPN4R712MD,L1Q products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

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6. What is the process for return or replacement of TPN4R712MD,L1Q?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TPN4R712MD,L1Q we delivered, we will accept the replacement or return of the TPN4R712MD,L1Q only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TPN4R712MD,L1Q.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TPN4R712MD,L1Q pin diagram, TPN4R712MD,L1Q datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение TPN4R712MD,L1Q SSM3J356R,LF SSM3J372R,LF SSM3J351R,LF SSM6J507NU,LF
Номер детали TPN4R712MD,L1Q SSM3J356R,LF SSM3J372R,LF SSM3J351R,LF SSM6J507NU,LF
Производитель Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series U-MOSVI U-MOSVI U-MOSVI U-MOSVI U-MOSVI
ProductStatus Active Active Active Active Active
FETType P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V 20 V 20 V 20 V 20 V
Current-ContinuousDrain(Id)@25°C 36A (Tc) 36A (Tc) 36A (Tc) 36A (Tc) 36A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V 2.5V, 4.5V
RdsOn(Max)@IdVgs 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V 4.7mOhm @ 18A, 4.5V
Vgs(th)(Max)@Id 1.2V @ 1mA 1.2V @ 1mA 1.2V @ 1mA 1.2V @ 1mA 1.2V @ 1mA
GateCharge(Qg)(Max)@Vgs 65 nC @ 5 V 65 nC @ 5 V 65 nC @ 5 V 65 nC @ 5 V 65 nC @ 5 V
Vgs(Max) ±12V ±12V ±12V ±12V ±12V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 10 V 4300 pF @ 10 V 4300 pF @ 10 V 4300 pF @ 10 V 4300 pF @ 10 V
FETFeature - - - - -
PowerDissipation(Max) 42W (Tc) 42W (Tc) 42W (Tc) 42W (Tc) 42W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

TPN4R712MD,L1Q Актуальная информация

Включенные следующие детали "TPN4R712MD,L1Q" ISSI, Интегрированные Силиконовые Решения Инк TPN4R712MD,L1Q.

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