Toshiba Semiconductor and Storage TW048N65C,S1F

Номер детали
TW048N65C,S1F
Производитель
Toshiba Semiconductor and Storage
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-247
Технические
Нахождение ЧипаTW048N65C,S1F.pdf
Описание
G3 650V SIC-MOSFET TO-247 48MOH
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order TW048N65C,S1F on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that TW048N65C,S1F is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the TW048N65C,S1F. All suppliers must pass our qualification reviews before they can publish their products including TW048N65C,S1F on Нахождение Чипа; we pay more attention to the channels and quality of TW048N65C,S1F products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the TW048N65C,S1F price and inventory displayed accurate?

The price and inventory of TW048N65C,S1F fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of TW048N65C,S1F?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the TW048N65C,S1F we delivered, we will accept the replacement or return of the TW048N65C,S1F only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TW048N65C,S1F.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as TW048N65C,S1F pin diagram, TW048N65C,S1F datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение TK31Z60X,S1F TK62Z60X,S1F TK190E65Z,S1X TW048N65C,S1F SSM3J15FS,LF
Номер детали TK31Z60X,S1F TK62Z60X,S1F TK190E65Z,S1X TW048N65C,S1F SSM3J15FS,LF
Производитель Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage Toshiba Semiconductor and Storage
Packaging Tube Tube Tube Tube Tube
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss) 650 V 650 V 650 V 650 V 650 V
Current-ContinuousDrain(Id)@25°C 40A (Tc) 40A (Tc) 40A (Tc) 40A (Tc) 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 18V 18V 18V 18V 18V
RdsOn(Max)@IdVgs 65mOhm @ 20A, 18V 65mOhm @ 20A, 18V 65mOhm @ 20A, 18V 65mOhm @ 20A, 18V 65mOhm @ 20A, 18V
Vgs(th)(Max)@Id 5V @ 1.6mA 5V @ 1.6mA 5V @ 1.6mA 5V @ 1.6mA 5V @ 1.6mA
GateCharge(Qg)(Max)@Vgs 41 nC @ 18 V 41 nC @ 18 V 41 nC @ 18 V 41 nC @ 18 V 41 nC @ 18 V
Vgs(Max) +25V, -10V +25V, -10V +25V, -10V +25V, -10V +25V, -10V
InputCapacitance(Ciss)(Max)@Vds 1362 pF @ 400 V 1362 pF @ 400 V 1362 pF @ 400 V 1362 pF @ 400 V 1362 pF @ 400 V
FETFeature - - - - -
PowerDissipation(Max) 132W (Tc) 132W (Tc) 132W (Tc) 132W (Tc) 132W (Tc)
OperatingTemperature 175°C 175°C 175°C 175°C 175°C
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

TW048N65C,S1F Актуальная информация

Включенные следующие детали "TW048N65C,S1F" ISSI, Интегрированные Силиконовые Решения Инк TW048N65C,S1F.

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