Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FQP32N20C

FQP32N20C

MOSFET N-CH 200V 28A TO220-3

onsemi
3,170 -

RFQ

FQP32N20C

Технические

Tube QFET® Last Time Buy N-Channel MOSFET (Metal Oxide) 200 V 28A (Tc) 10V 82mOhm @ 14A, 10V 4V @ 250µA 110 nC @ 10 V ±30V 2200 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP21N60L

IRFP21N60L

MOSFET N-CH 600V 21A TO247-3

Vishay Siliconix
3,783 -

RFQ

IRFP21N60L

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) 10V 320mOhm @ 13A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 4000 pF @ 25 V - 330W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK0603DPN-A0#T2

RJK0603DPN-A0#T2

MOSFET N-CH 60V 80A TO220ABA

Renesas Electronics America Inc
2,396 -

RFQ

RJK0603DPN-A0#T2

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Ta) 10V 5.2mOhm @ 40A, 10V 4V @ 1mA 57 nC @ 10 V ±20V 4150 pF @ 10 V - 125W (Ta) 150°C Through Hole
IRFP22N60K

IRFP22N60K

MOSFET N-CH 600V 22A TO247-3

Vishay Siliconix
3,331 -

RFQ

IRFP22N60K

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V 280mOhm @ 13A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 3570 pF @ 25 V - 370W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP26N60L

IRFP26N60L

MOSFET N-CH 600V 26A TO247-3

Vishay Siliconix
3,303 -

RFQ

IRFP26N60L

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 26A (Tc) 10V 250mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 5020 pF @ 25 V - 470W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP27N60K

IRFP27N60K

MOSFET N-CH 600V 27A TO247-3

Vishay Siliconix
2,525 -

RFQ

IRFP27N60K

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V 220mOhm @ 16A, 10V 5V @ 250µA 180 nC @ 10 V ±30V 4660 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS38N60L

IRFPS38N60L

MOSFET N-CH 600V 38A SUPER247

Vishay Siliconix
2,713 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 38A (Tc) 10V 150mOhm @ 23A, 10V 5V @ 250µA 320 nC @ 10 V ±30V 7990 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFPS40N60K

IRFPS40N60K

MOSFET N-CH 600V 40A SUPER247

Vishay Siliconix
3,992 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 40A (Tc) 10V 130mOhm @ 24A, 10V 5V @ 250µA 330 nC @ 10 V ±30V 7970 pF @ 25 V - 570W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI4196DY-T1-GE3

SI4196DY-T1-GE3

MOSFET N-CH 20V 8A 8SO

Vishay Siliconix
3,821 -

RFQ

SI4196DY-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 8A (Tc) 1.8V, 4.5V 27mOhm @ 8A, 4.5V 1V @ 250µA 22 nC @ 8 V ±8V 830 pF @ 10 V - 2W (Ta), 4.6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4752DY-T1-GE3

SI4752DY-T1-GE3

MOSFET N-CH 30V 25A 8SO

Vishay Siliconix
3,128 -

RFQ

SI4752DY-T1-GE3

Технические

Tape & Reel (TR) SkyFET®, TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 25A (Tc) 4.5V, 10V 5.5mOhm @ 10A, 10V 2.2V @ 1mA 43 nC @ 10 V ±20V 1700 pF @ 15 V Schottky Diode (Body) 3W (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIHA17N80AEF-GE3

SIHA17N80AEF-GE3

EF SERIES POWER MOSFET WITH FAST

Vishay Siliconix
2,469 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 6.5A (Tc) 10V 305mOhm @ 8.5A, 10V 4V @ 250µA 63 nC @ 10 V ±30V 1300 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI8809EDB-T2-E1

SI8809EDB-T2-E1

MOSFET P-CH 20V 1.9A MICROFOOT

Vishay Siliconix
2,179 -

RFQ

SI8809EDB-T2-E1

Технические

Tape & Reel (TR) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.94 (Ta) 1.8V, 4.5V 90mOhm @ 1.5A, 4.5V 900mV @ 250µA 15 nC @ 8 V ±8V - - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
TK3R2A08QM,S4X

TK3R2A08QM,S4X

UMOS10 TO-220SIS 80V 3.2MOHM

Toshiba Semiconductor and Storage
2,904 -

RFQ

TK3R2A08QM,S4X

Технические

Tube U-MOSX-H Active N-Channel MOSFET (Metal Oxide) 80 V 92A (Tc) 6V, 10V 3.2mOhm @ 46A, 10V 3.5V @ 1.3mA 102 nC @ 10 V ±20V 7670 pF @ 40 V - 45W (Tc) 175°C Through Hole
SIHB30N60E-E3

SIHB30N60E-E3

MOSFET N-CH 600V 29A D2PAK

Vishay Siliconix
3,511 -

RFQ

SIHB30N60E-E3

Технические

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 29A (Tc) 10V 125mOhm @ 15A, 10V 4V @ 250µA 130 nC @ 10 V ±30V 2600 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDP053N08B-F102

FDP053N08B-F102

MOSFET N-CH 80V 75A TO220-3

onsemi
3,160 -

RFQ

FDP053N08B-F102

Технические

Tube PowerTrench® Active N-Channel MOSFET (Metal Oxide) 80 V 75A (Tc) 10V 5.3mOhm @ 75A, 10V 4.5V @ 250µA 85 nC @ 10 V ±20V 5960 pF @ 40 V - 146W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHW23N60E-GE3

SIHW23N60E-GE3

MOSFET N-CH 600V 23A TO247AD

Vishay Siliconix
3,016 -

RFQ

SIHW23N60E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 158mOhm @ 12A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2418 pF @ 100 V - 227W (Tc) -55°C ~ 150°C (TJ) Through Hole
RJK1003DPP-A0#T2

RJK1003DPP-A0#T2

MOSFET N-CH 100V 50A TO220FPA

Renesas Electronics America Inc
2,390 -

RFQ

RJK1003DPP-A0#T2

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 50A (Ta) 10V 11mOhm @ 25A, 10V 4V @ 1mA 59 nC @ 10 V ±20V 4150 pF @ 10 V - 25W (Ta) 150°C Through Hole
SIHW47N65E-GE3

SIHW47N65E-GE3

MOSFET N-CH 650V 47A TO247AD

Vishay Siliconix
2,547 -

RFQ

SIHW47N65E-GE3

Технические

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 47A (Tc) 10V 72mOhm @ 24A, 10V 4V @ 250µA 273 nC @ 10 V ±20V 5682 pF @ 100 V - 417W (Tc) -55°C ~ 150°C (TJ) Through Hole
NP180N04TUK-E1-AY

NP180N04TUK-E1-AY

MOSFET N-CH 40V 180A TO263-7

Renesas Electronics America Inc
2,470 -

RFQ

NP180N04TUK-E1-AY

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) 10V 1.05mOhm @ 90A, 10V 4V @ 250µA 297 nC @ 10 V ±20V 15750 pF @ 25 V - 1.8W (Ta), 348W (Tc) 175°C (TJ) Surface Mount
SIR482DP-T1-GE3

SIR482DP-T1-GE3

MOSFET N-CH 30V 35A PPAK SO-8

Vishay Siliconix
3,687 -

RFQ

SIR482DP-T1-GE3

Технические

Tape & Reel (TR) TrenchFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 5.6mOhm @ 20A, 10V 2.3V @ 250µA 38 nC @ 10 V ±20V 1575 pF @ 15 V - 5W (Ta), 27.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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