Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
VP0300B-E3

VP0300B-E3

MOSFET P-CH 30V 0.32A TO-205

Vishay Siliconix
3,399 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 320mA (Ta) - 2.5Ohm @ 1A, 12V 4.5V @ 1mA - - 150 pF @ 15 V - - - -
VP0808B

VP0808B

MOSFET P-CH 80V 880MA TO39

Vishay Siliconix
3,002 -

RFQ

VP0808B

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 80 V 880mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP0808B-2

VP0808B-2

MOSFET P-CH 80V 880MA TO39

Vishay Siliconix
2,812 -

RFQ

VP0808B-2

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 80 V 880mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP0808B-E3

VP0808B-E3

MOSFET P-CH 80V 880MA TO39

Vishay Siliconix
3,056 -

RFQ

VP0808B-E3

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 80 V 880mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VP1008B

VP1008B

MOSFET P-CH 100V 790MA TO39

Vishay Siliconix
2,841 -

RFQ

VP1008B

Технические

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 790mA (Ta) 10V 5Ohm @ 1A, 10V 4.5V @ 1mA - ±20V 150 pF @ 25 V - 6.25W (Ta) -55°C ~ 150°C (TJ) Through Hole
VQ1004P

VQ1004P

MOSFET N-CH 60V 0.4A TO-205

Vishay Siliconix
3,038 -

RFQ

Tube - Obsolete - - - 830mA (Ta) 5V, 10V - - - ±20V - - - - -
VQ1004P-2

VQ1004P-2

MOSFET N-CH 60V 0.4A TO-205

Vishay Siliconix
2,668 -

RFQ

Tube - Obsolete - - - - 5V, 10V - - - ±20V - - - - -
VQ1004P-E3

VQ1004P-E3

MOSFET N-CH 60V 0.4A TO-205

Vishay Siliconix
2,227 -

RFQ

Tube - Obsolete - - - 830mA (Ta) 5V, 10V - - - ±20V - - - - -
AUIRFP4409

AUIRFP4409

MOSFET N-CH 300V 38A TO247AC

Infineon Technologies
3,131 -

RFQ

AUIRFP4409

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFSL8409

AUIRFSL8409

MOSFET N-CH 40V 195A TO262

Infineon Technologies
2,974 -

RFQ

AUIRFSL8409

Технические

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
STDLED524

STDLED524

MOSFET N-CH 525V 4A DPAK

STMicroelectronics
3,475 -

RFQ

STDLED524

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 525 V 4A (Tc) 10V 2.6Ohm @ 2.2A, 10V 4.5V @ 50µA 12 nC @ 10 V ±30V 340 pF @ 100 V - 45W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STDLED623

STDLED623

MOSFET N-CH 620V 3A DPAK

STMicroelectronics
2,452 -

RFQ

STDLED623

Технические

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 620 V 3A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4.5V @ 50µA 15.5 nC @ 10 V ±30V 350 pF @ 50 V - 45W (Tc) 150°C (TJ) Surface Mount
IRFHM8235TRPBF

IRFHM8235TRPBF

MOSFET N-CH 25V 16A 8PQFN

Infineon Technologies
3,838 -

RFQ

IRFHM8235TRPBF

Технические

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 16A (Ta) 4.5V, 10V 7.7mOhm @ 20A, 10V 2.35V @ 25µA 12 nC @ 4.5 V ±20V 1040 pF @ 10 V - 3W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FCU360N65S3R0

FCU360N65S3R0

MOSFET N-CH 600V IPAK

onsemi
5,521 -

RFQ

FCU360N65S3R0

Технические

Bulk,Tube SuperFET® III Active - - - 10A (Tc) - - - - - - - - - Through Hole
RFM25N06

RFM25N06

N-CHANNEL POWER MOSFET

Harris Corporation
3,749 -

RFQ

RFM25N06

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 10V 70mOhm @ 12.5A, 10V 4V @ 1mA - ±20V 1700 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
RBA250N10CHPF-4UA02#GB0

RBA250N10CHPF-4UA02#GB0

MP-25LZU

Renesas Electronics America Inc
2,566 -

RFQ

RBA250N10CHPF-4UA02#GB0

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Ta) 10V 2.4mOhm @ 125A, 10V 3.8V @ 250µA 190 nC @ 10 V ±20V 9500 pF @ 50 V - 1.8W (Ta), 348W (Tc) 175°C Surface Mount
NTMFS10N7D2C

NTMFS10N7D2C

MOSFET N-CH 100V 78A 8PQFN

onsemi
3,585 -

RFQ

NTMFS10N7D2C

Технические

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 78A (Tc) 6V, 10V 7.2mOhm @ 28A, 10V 4V @ 150µA 37 nC @ 10 V ±20V 2635 pF @ 50 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFB3407ZPBF

IRFB3407ZPBF

MOSFET N-CH 75V 120A TO220AB

Infineon Technologies
2,225 -

RFQ

IRFB3407ZPBF

Технические

Bulk,Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 120A (Tc) 10V 6.4mOhm @ 75A, 10V 4V @ 150µA 110 nC @ 10 V ±20V 4750 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
AON7522E

AON7522E

MOSFET N-CH 30V 21A/34A 8DFN

Alpha & Omega Semiconductor Inc.
37,394 -

RFQ

AON7522E

Технические

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 34A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.2V @ 250µA 45 nC @ 10 V ±20V 1540 pF @ 15 V - 3.1W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2318DS-T1-E3

SI2318DS-T1-E3

MOSFET N-CH 40V 3A SOT23-3

Vishay Siliconix
2,176 -

RFQ

SI2318DS-T1-E3

Технические

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 40 V 3A (Ta) 4.5V, 10V 45mOhm @ 3.9A, 10V 3V @ 250µA 15 nC @ 10 V ±20V 540 pF @ 20 V - 750mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
1500+
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20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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