Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH2N300P3HV

IXTH2N300P3HV

MOSFET N-CH 3000V 2A TO247HV

IXYS
291 -

RFQ

IXTH2N300P3HV

Технические

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 2A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ64N25P

IXTQ64N25P

MOSFET N-CH 250V 64A TO3P

IXYS
2,428 -

RFQ

IXTQ64N25P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 250 V 64A (Tc) 10V 49mOhm @ 500mA, 10V 5V @ 250µA 105 nC @ 10 V ±20V 3450 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ96N15P

IXTQ96N15P

MOSFET N-CH 150V 96A TO3P

IXYS
2,558 -

RFQ

IXTQ96N15P

Технические

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 96A (Tc) 10V 24mOhm @ 500mA, 10V 5V @ 250µA 110 nC @ 10 V ±20V 3500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFH76N15T2

IXFH76N15T2

MOSFET N-CH 150V 76A TO247

IXYS
2,795 -

RFQ

IXFH76N15T2

Технические

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 150 V 76A (Tc) 10V 22mOhm @ 38A, 10V 4.5V @ 250µA 97 nC @ 10 V ±20V 5800 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTA34N65X2

IXTA34N65X2

MOSFET N-CH 650V 34A TO263AA

IXYS
2,383 -

RFQ

IXTA34N65X2

Технические

Tube Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 34A (Tc) 10V 96mOhm @ 17A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 3000 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTQ32P20T

IXTQ32P20T

MOSFET P-CH 200V 32A TO3P

IXYS
3,529 -

RFQ

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 200 V 32A (Tc) 10V 130mOhm @ 16A, 10V 4V @ 250µA 185 nC @ 10 V ±15V 14500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA260N055T2-7

IXTA260N055T2-7

MOSFET N-CH 55V 260A TO263-7

IXYS
2,498 -

RFQ

IXTA260N055T2-7

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 260A (Tc) 10V 3.3mOhm @ 50A, 10V 4V @ 250µA 140 nC @ 10 V ±20V 10800 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTH96N25T

IXTH96N25T

MOSFET N-CH 250V 96A TO247

IXYS
3,901 -

RFQ

IXTH96N25T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 96A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 114 nC @ 10 V ±30V 6100 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFP50N20X3

IXFP50N20X3

DISCMSFT NCHULTRJNCTX3CLASS TO-2

IXYS
2,011 -

RFQ

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 200 V 50A (Tc) 10V 30mOhm @ 25A, 10V 4.5V @ 1mA 33 nC @ 10 V ±20V 2100 pF @ 25 V - 240W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH340N04T4

IXTH340N04T4

MOSFET N-CH 40V 340A TO247

IXYS
2,702 -

RFQ

IXTH340N04T4

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 40 V 340A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 250µA 256 nC @ 10 V ±15V 13000 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH3N120

IXTH3N120

MOSFET N-CH 1200V 3A TO247

IXYS
3,540 -

RFQ

IXTH3N120

Технические

Box - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 500mA, 10V 4.5V @ 250µA 39 nC @ 10 V ±20V 1300 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTA220N04T2-7

IXTA220N04T2-7

MOSFET N-CH 40V 220A TO263-7

IXYS
2,288 -

RFQ

IXTA220N04T2-7

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA230N075T2-7

IXTA230N075T2-7

MOSFET N-CH 75V 230A TO263-7

IXYS
2,496 -

RFQ

IXTA230N075T2-7

Технические

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 75 V 230A (Tc) 10V 4.2mOhm @ 50A, 10V 4V @ 250µA 178 nC @ 10 V ±20V 10500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFA130N15X3TRL

IXFA130N15X3TRL

MOSFET N-CH 150V 130A TO263

IXYS
3,617 -

RFQ

Tape & Reel (TR) HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 130A (Tc) 10V 9mOhm @ 65A, 10V 4.5V @ 1.5mA 80 nC @ 10 V ±20V 5230 pF @ 25 V - 390W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFA3N120-TRR

IXFA3N120-TRR

MOSFET N-CH 1200V 3A TO263

IXYS
2,595 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 1200 V 3A (Tc) 10V 4.5Ohm @ 1.5A, 10V 5V @ 1.5mA 39 nC @ 10 V ±20V 1050 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH102N15T

IXTH102N15T

MOSFET N-CH 150V 102A TO247

IXYS
2,123 -

RFQ

IXTH102N15T

Технические

Tube Trench Active N-Channel MOSFET (Metal Oxide) 150 V 102A (Tc) 10V 18mOhm @ 500mA, 10V 5V @ 1mA 87 nC @ 10 V ±20V 5220 pF @ 25 V - 455W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTH86N20T

IXTH86N20T

MOSFET N-CH 200V 86A TO247

IXYS
2,830 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) - - - - - - - - - Through Hole
IXTQ86N25T

IXTQ86N25T

MOSFET N-CH 250V 86A TO3P

IXYS
3,780 -

RFQ

Tube Trench Active N-Channel MOSFET (Metal Oxide) 250 V 86A (Tc) 10V 37mOhm @ 43A, 10V 5V @ 1mA 105 nC @ 10 V ±30V 5330 pF @ 25 V - 540W (Ta) -55°C ~ 150°C (TJ) Through Hole
IXTQ32N65X

IXTQ32N65X

MOSFET N-CH 650V 32A TO3P

IXYS
2,712 -

RFQ

IXTQ32N65X

Технические

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 32A (Tc) 10V 135mOhm @ 16A, 10V 5.5V @ 250µA 54 nC @ 10 V ±30V 2205 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH24N60X

IXFH24N60X

MOSFET N-CH 600V 24A TO247-3

IXYS
2,583 -

RFQ

IXFH24N60X

Технические

Tube HiPerFET™, Ultra X Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V 175mOhm @ 12A, 10V 4.5V @ 2.5mA 47 nC @ 10 V ±30V 1910 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
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