Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ21MOSFET N-CH 100V 21A TO220AB Harris Corporation |
44,223 | - |
RFQ |
![]() Технические |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Tc) | - | 85mOhm @ 13A, 10V | 4V @ 1mA | - | - | 1300 pF @ 25 V | - | - | - | Through Hole |
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IRFP150MOSFET N-CH 100V 41A TO247-3 Harris Corporation |
14,389 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140 nC @ 10 V | ±20V | 2800 pF @ 25 V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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2N6792N-CHANNEL POWER MOSFET Harris Corporation |
10,903 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 1.8Ohm @ 1.25A, 10V | 4V @ 1mA | - | ±20V | 600 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF331N-CHANNEL POWER MOSFET Harris Corporation |
5,599 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 5.5A (Tc) | 10V | 1Ohm @ 3A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF641N-CHANNEL POWER MOSFET Harris Corporation |
14,411 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFW2N06RLEN-CHANNEL POWER MOSFET Harris Corporation |
915 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 2A (Tc) | 5V | 200mOhm @ 2A, 5V | 2V @ 250µA | 30 nC @ 10 V | +10V, -5V | 535 pF @ 25 V | - | 1.09W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFL1N15LN-CHANNEL POWER MOSFET Harris Corporation |
1,621 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Tc) | 5V | 1.9Ohm @ 1A, 5V | 2V @ 250µA | - | ±10V | 200 pF @ 25 V | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF64414A, 250V, 0.28 OHM, N-CHANNEL Harris Corporation |
24,596 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 280mOhm @ 8.4A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF120N-CHANNEL POWER MOSFET Harris Corporation |
498 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 300mOhm @ 4A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF351N-CHANNEL POWER MOSFET Harris Corporation |
1,804 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 15A (Tc) | 10V | 300mOhm @ 8A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFPG42N-CHANNEL POWER MOSFET Harris Corporation |
2,551 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 3.9A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | - | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S9540P-CHANNEL POWER MOSFETS Harris Corporation |
7,199 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 19A (Tc) | 10V | 200mOhm @ 10A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RFP10P15P-CHANNEL POWER MOSFET Harris Corporation |
75,487 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 10V | 500mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 1700 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFB18N10CSMOSFET N-CH 100V 18A TO220AB-5 Harris Corporation |
1,768 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 18A (Tc) | - | 100mOhm @ 9A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | - | Current Sensing | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RFP25N06LN-CHANNEL, MOSFET Harris Corporation |
1,389 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 5V | 85mOhm @ 12.5A, 5V | 2V @ 1mA | - | ±10V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S640SMMOSFET N-CH 200V 18A TO263AB Harris Corporation |
805 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | - | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RFG30P05P-CHANNEL POWER MOSFET Harris Corporation |
1,617 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 50 V | 30A (Tc) | 10V | 65mOhm @ 30A, 10V | 4V @ 250µA | 170 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP440MOSFET N-CH 500V 8.8A TO247-3 Harris Corporation |
1,892 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 8.8A (Tc) | 10V | 850mOhm @ 5.3A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF244N-CHANNEL POWER MOSFET Harris Corporation |
37,562 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 8.8A (Tc) | 10V | 280mOhm @ 8A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP9240MOSFET P-CH 200V 12A TO247-3 Harris Corporation |
5,232 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 12A (Tc) | 10V | 500mOhm @ 7.2A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |