Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IRF223N-CHANNEL POWER MOSFET Harris Corporation |
3,136 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Tc) | 10V | 1.2Ohm @ 2.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
2N6759N-CHANNEL POWER MOSFET Harris Corporation |
3,255 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 4.5A (Tc) | 10V | 1.5Ohm @ 3A, 10V | 4V @ 1mA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRF532N-CHANNEL POWER MOSFET Harris Corporation |
2,722 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 230mOhm @ 8.3A, 10V | 4V @ 250µA | 26 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRF433N-CHANNEL POWER MOSFET Harris Corporation |
2,063 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4A | - | - | - | - | - | - | - | 75W | - | Through Hole |
![]() |
HRF3205MOSFET N-CH 55V 100A TO220-3 Harris Corporation |
3,650 | - |
RFQ |
Bulk | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | |
![]() |
IRFP151N-CHANNEL POWER MOSFET Harris Corporation |
2,158 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 55mOhm @ 22A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
RFM25N06N-CHANNEL POWER MOSFET Harris Corporation |
3,749 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 25A (Tc) | 10V | 70mOhm @ 12.5A, 10V | 4V @ 1mA | - | ±20V | 1700 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
RFM10N15LN-CHANNEL POWER MOSFET Harris Corporation |
3,401 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 10A (Tc) | 5V | 300mOhm @ 5A, 5V | - | - | ±10V | 1200 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
RFH75N0575A, 50V, 0.008OHM, N-CHANNEL Harris Corporation |
3,605 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | - | - | - | - | - | - | - | - | - | - | |
![]() |
IRFD321N-CHANNEL POWER MOSFET Harris Corporation |
3,979 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 500mA (Tc) | 10V | 1.8Ohm @ 250mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 455 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
RFM10N45N-CHANNEL POWER MOSFET Harris Corporation |
3,678 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 10A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
RFH45N05N-CHANNEL POWER MOSFET Harris Corporation |
3,323 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 45A (Tc) | 10V | 40mOhm @ 22.5A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
RFH75N05EN-CHANNEL POWER MOSFET Harris Corporation |
2,730 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 400 nC @ 20 V | ±20V | - | - | 240W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
JANSR2N729225A, 100V, 0.070 OHM, RAD HARD Harris Corporation |
2,832 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 70mOhm @ 20A, 10V | 5V @ 1mA | 552 nC @ 20 V | ±20V | - | - | 125W (Tc) | -55°C ~ 150°C (TJ) | |
![]() |
IRFU91103.1A 100V 1.200 OHM P-CHANNEL Harris Corporation |
2,564 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRF520MOSFET N-CH 100V 9.2A TO220AB Harris Corporation |
1,331 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 9.2A (Tc) | - | 270mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
IRFD91100.7A 100V 1.200 OHM P-CHANNEL Harris Corporation |
15,652 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 700mA (Ta) | 10V | 1.2Ohm @ 420mA, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
RFD20N03N-CHANNEL POWER MOSFET Harris Corporation |
10,550 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | 10V | 25mOhm @ 20A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1150 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
![]() |
BUZ73AMOSFET N-CH 200V 5.5A TO220-3 Harris Corporation |
25,614 | - |
RFQ |
![]() Технические |
Tube | SIPMOS® | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 600mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 530 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
![]() |
IRF621N-CHANNEL POWER MOSFET Harris Corporation |
14,230 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 5A (Tc) | 10V | 800mOhm @ 2.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |