Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFP15N06

RFP15N06

N-CHANNEL POWER MOSFET

Harris Corporation
27,167 -

RFQ

RFP15N06

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 15A (Tc) 10V 140mOhm @ 7.5A, 10V 4V @ 1mA - ±20V 850 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF822

IRF822

N-CHANNEL POWER MOSFET

Harris Corporation
20,598 -

RFQ

IRF822

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP2P10

RFP2P10

P-CHANNEL POWER MOSFET

Harris Corporation
11,516 -

RFQ

RFP2P10

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 2A (Tc) 10V 3.5Ohm @ 1A, 10V 4V @ 1mA - ±20V 150 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75307D3

HUF75307D3

MOSFET N-CH 55V 15A IPAK

Harris Corporation
8,653 -

RFQ

HUF75307D3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD1Z3

IRFD1Z3

SMALL SIGNAL N-CHANNEL MOSFET

Harris Corporation
12,838 -

RFQ

IRFD1Z3

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 400mA (Tc) 10V 3.2Ohm @ 250mA, 10V 4V @ 250µA 3 nC @ 10 V ±20V 50 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP6P10

RFP6P10

P-CHANNEL POWER MOSFET

Harris Corporation
42,094 -

RFQ

RFP6P10

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA - ±20V 800 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD110

IRFD110

1A, 100V, 0.600 OHM, N-CHANNEL

Harris Corporation
47,320 -

RFQ

IRFD110

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Ta) 10V 540mOhm @ 600mA, 10V 4V @ 250µA 8.3 nC @ 10 V ±20V 180 pF @ 25 V - 1.3W (Ta) -55°C ~ 175°C (TJ) Through Hole
RFP12N06RLE

RFP12N06RLE

N-CHANNEL POWER MOSFET

Harris Corporation
13,334 -

RFQ

RFP12N06RLE

Технические

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 4.5V, 10V 63mOhm @ 18A, 10V 3V @ 250µA 15 nC @ 10 V ±16V 485 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF820

IRF820

2.5A, 500V, 3.000 OHM, N-CHANNEL

Harris Corporation
3,895 -

RFQ

IRF820

Технические

Bulk PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 315 pF @ 25 V - 80W (Tc) 150°C (TJ) Through Hole
BUZ76A

BUZ76A

N-CHANNEL POWER MOSFET

Harris Corporation
10,600 -

RFQ

BUZ76A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2.6A (Tc) 10V 2.5Ohm @ 1.5A, 10V 4V @ 1mA - ±20V 500 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP15N08L

RFP15N08L

N-CHANNEL POWER MOSFET

Harris Corporation
49,688 -

RFQ

RFP15N08L

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 15A (Tc) 5V 140mOhm @ 7.5A, 5V 2.5V @ 1mA 80 nC @ 10 V ±10V - - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF521

IRF521

N-CHANNEL POWER MOSFET

Harris Corporation
26,458 -

RFQ

IRF521

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 9.2A (Tc) 10V 270mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFD9113

IRFD9113

-0.6A, -80V, 1.6 OHM, P-CHANNEL

Harris Corporation
2,665 -

RFQ

IRFD9113

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 600mA (Ta) - 1.6Ohm @ 300mA, 10V - 15 nC @ 15 V - 250 pF @ 25 V - - - Through Hole
IRF9533

IRF9533

P-CHANNEL POWER MOSFET

Harris Corporation
11,834 -

RFQ

IRF9533

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 10A (Tc) 10V 400mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD10N05SM

RFD10N05SM

10A, 50V, N-CHANNEL

Harris Corporation
11,883 -

RFQ

RFD10N05SM

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V - - - - - - - - - -
IRFD113

IRFD113

MOSFET N-CH 60V 800MA 4DIP

Harris Corporation
53,569 -

RFQ

IRFD113

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 800mA (Tc) 10V 800mOhm @ 800mA, 10V 4V @ 250µA 7 nC @ 10 V ±20V 200 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF630

IRF630

MOSFET N-CH 200V 9A TO220AB

Harris Corporation
23,207 -

RFQ

IRF630

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) - 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V - 800 pF @ 25 V - - - Through Hole
RFP45N03L

RFP45N03L

N-CHANNEL POWER MOSFET

Harris Corporation
41,855 -

RFQ

RFP45N03L

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 45A (Tc) 5V 22mOhm @ 45A, 5V 2V @ 250µA 60 nC @ 10 V ±10V 1650 pF @ 25 V - 90W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9532

IRF9532

P-CHANNEL POWER MOSFET

Harris Corporation
19,190 -

RFQ

IRF9532

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 10V 400mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF723

IRF723

N-CHANNEL POWER MOSFET

Harris Corporation
79,897 -

RFQ

IRF723

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 2.8A (Tc) 10V 2.5Ohm @ 1.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
1500+
1500+ Ежедневный
20,000.000
20,000.000 Продукты
1800+
1800+ производители
15,000+
15,000+ Складские запасы
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