Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RFP15N06N-CHANNEL POWER MOSFET Harris Corporation |
27,167 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 10V | 140mOhm @ 7.5A, 10V | 4V @ 1mA | - | ±20V | 850 pF @ 25 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF822N-CHANNEL POWER MOSFET Harris Corporation |
20,598 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.2A (Tc) | 10V | 4Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP2P10P-CHANNEL POWER MOSFET Harris Corporation |
11,516 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 2A (Tc) | 10V | 3.5Ohm @ 1A, 10V | 4V @ 1mA | - | ±20V | 150 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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HUF75307D3MOSFET N-CH 55V 15A IPAK Harris Corporation |
8,653 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | 10V | 90mOhm @ 15A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFD1Z3SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
12,838 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 400mA (Tc) | 10V | 3.2Ohm @ 250mA, 10V | 4V @ 250µA | 3 nC @ 10 V | ±20V | 50 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP6P10P-CHANNEL POWER MOSFET Harris Corporation |
42,094 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFD1101A, 100V, 0.600 OHM, N-CHANNEL Harris Corporation |
47,320 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 540mOhm @ 600mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Through Hole |
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RFP12N06RLEN-CHANNEL POWER MOSFET Harris Corporation |
13,334 | - |
RFQ |
![]() Технические |
Bulk | UltraFET™ | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 18A (Tc) | 4.5V, 10V | 63mOhm @ 18A, 10V | 3V @ 250µA | 15 nC @ 10 V | ±16V | 485 pF @ 25 V | - | 49W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF8202.5A, 500V, 3.000 OHM, N-CHANNEL Harris Corporation |
3,895 | - |
RFQ |
![]() Технические |
Bulk | PowerMESH™ II | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 17 nC @ 10 V | ±30V | 315 pF @ 25 V | - | 80W (Tc) | 150°C (TJ) | Through Hole |
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BUZ76AN-CHANNEL POWER MOSFET Harris Corporation |
10,600 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2.6A (Tc) | 10V | 2.5Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±20V | 500 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP15N08LN-CHANNEL POWER MOSFET Harris Corporation |
49,688 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 15A (Tc) | 5V | 140mOhm @ 7.5A, 5V | 2.5V @ 1mA | 80 nC @ 10 V | ±10V | - | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF521N-CHANNEL POWER MOSFET Harris Corporation |
26,458 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 9.2A (Tc) | 10V | 270mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFD9113-0.6A, -80V, 1.6 OHM, P-CHANNEL Harris Corporation |
2,665 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 600mA (Ta) | - | 1.6Ohm @ 300mA, 10V | - | 15 nC @ 15 V | - | 250 pF @ 25 V | - | - | - | Through Hole |
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IRF9533P-CHANNEL POWER MOSFET Harris Corporation |
11,834 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 10A (Tc) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFD10N05SM10A, 50V, N-CHANNEL Harris Corporation |
11,883 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | - | - | - | - | - | - | - | - | - | - | |
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IRFD113MOSFET N-CH 60V 800MA 4DIP Harris Corporation |
53,569 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 800mA (Tc) | 10V | 800mOhm @ 800mA, 10V | 4V @ 250µA | 7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF630MOSFET N-CH 200V 9A TO220AB Harris Corporation |
23,207 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43 nC @ 10 V | - | 800 pF @ 25 V | - | - | - | Through Hole |
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RFP45N03LN-CHANNEL POWER MOSFET Harris Corporation |
41,855 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 45A (Tc) | 5V | 22mOhm @ 45A, 5V | 2V @ 250µA | 60 nC @ 10 V | ±10V | 1650 pF @ 25 V | - | 90W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF9532P-CHANNEL POWER MOSFET Harris Corporation |
19,190 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Tc) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF723N-CHANNEL POWER MOSFET Harris Corporation |
79,897 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 2.8A (Tc) | 10V | 2.5Ohm @ 1.8A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |