STMicroelectronics STB7ANM60N

Номер детали
STB7ANM60N
Производитель
STMicroelectronics
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
D2PAK
Технические
Нахождение ЧипаSTB7ANM60N.pdf
Описание
MOSFET N-CH 600V 5A D2PAK
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order STB7ANM60N on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that STB7ANM60N is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the STB7ANM60N. All suppliers must pass our qualification reviews before they can publish their products including STB7ANM60N on Нахождение Чипа; we pay more attention to the channels and quality of STB7ANM60N products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the STB7ANM60N price and inventory displayed accurate?

The price and inventory of STB7ANM60N fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of STB7ANM60N?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STB7ANM60N we delivered, we will accept the replacement or return of the STB7ANM60N only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STB7ANM60N.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STB7ANM60N pin diagram, STB7ANM60N datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение STD7ANM60N STD14NM50NAG STW19NM60N STB7ANM60N STB36NM60N
Номер детали STD7ANM60N STD14NM50NAG STW19NM60N STB7ANM60N STB36NM60N
Производитель STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V 600 V 600 V 600 V 600 V
Current-ContinuousDrain(Id)@25°C 5A (Tc) 5A (Tc) 5A (Tc) 5A (Tc) 5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 900mOhm @ 2.5A, 10V 900mOhm @ 2.5A, 10V 900mOhm @ 2.5A, 10V 900mOhm @ 2.5A, 10V 900mOhm @ 2.5A, 10V
Vgs(th)(Max)@Id 4V @ 250mA 4V @ 250mA 4V @ 250mA 4V @ 250mA 4V @ 250mA
GateCharge(Qg)(Max)@Vgs 14 nC @ 10 V 14 nC @ 10 V 14 nC @ 10 V 14 nC @ 10 V 14 nC @ 10 V
Vgs(Max) ±25V ±25V ±25V ±25V ±25V
InputCapacitance(Ciss)(Max)@Vds 363 pF @ 50 V 363 pF @ 50 V 363 pF @ 50 V 363 pF @ 50 V 363 pF @ 50 V
FETFeature - - - - -
PowerDissipation(Max) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc) 45W (Tc)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

STB7ANM60N Актуальная информация

Включенные следующие детали "STB7ANM60N" ISSI, Интегрированные Силиконовые Решения Инк STB7ANM60N.

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