STMicroelectronics STW19NM60N

Номер детали
STW19NM60N
Производитель
STMicroelectronics
Категория:
Транзисторы - FET, MOSFET - одиночные
Упаковка
TO-247-3
Технические
Нахождение ЧипаSTW19NM60N.pdf
Описание
MOSFET N-CH 600V 13A TO247
Количество

Модуль$0

Извлечение$0

Оплата
payment
Доставка
payment

Product details

1. How to order STW19NM60N on Нахождение Чипа?

Currently, Нахождение Чипа only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Нахождение Чипа guarantee that STW19NM60N is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the STW19NM60N. All suppliers must pass our qualification reviews before they can publish their products including STW19NM60N on Нахождение Чипа; we pay more attention to the channels and quality of STW19NM60N products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the STW19NM60N price and inventory displayed accurate?

The price and inventory of STW19NM60N fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of STW19NM60N?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the STW19NM60N we delivered, we will accept the replacement or return of the STW19NM60N only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of STW19NM60N.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as STW19NM60N pin diagram, STW19NM60N datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Изображение STD7ANM60N STD14NM50NAG STW19NM60N STB7ANM60N STB36NM60N
Номер детали STD7ANM60N STD14NM50NAG STW19NM60N STB7ANM60N STB36NM60N
Производитель STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Packaging Tube Tube Tube Tube Tube
Series Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II Automotive, AEC-Q101, MDmesh™ II
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 600 V 600 V 600 V 600 V 600 V
Current-ContinuousDrain(Id)@25°C 13A (Tc) 13A (Tc) 13A (Tc) 13A (Tc) 13A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 285mOhm @ 6.5A, 10V 285mOhm @ 6.5A, 10V 285mOhm @ 6.5A, 10V 285mOhm @ 6.5A, 10V 285mOhm @ 6.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V
Vgs(Max) ±25V ±25V ±25V ±25V ±25V
InputCapacitance(Ciss)(Max)@Vds 1000 pF @ 50 V 1000 pF @ 50 V 1000 pF @ 50 V 1000 pF @ 50 V 1000 pF @ 50 V
FETFeature - - - - -
PowerDissipation(Max) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc) 110W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

STW19NM60N Актуальная информация

Включенные следующие детали "STW19NM60N" ISSI, Интегрированные Силиконовые Решения Инк STW19NM60N.

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