Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
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GBLA02-E3/51BRIDGE RECT 1PHASE 200V 3A GBL Vishay General Semiconductor - Diodes Division |
3,967 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Avalanche | 200 V | 3 A | 1.1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA04-E3/51BRIDGE RECT 1PHASE 400V 3A GBL Vishay General Semiconductor - Diodes Division |
3,255 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 400 V | 3 A | 1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA06-E3/51BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division |
2,374 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA08-E3/51BRIDGE RECT 1PHASE 800V 3A GBL Vishay General Semiconductor - Diodes Division |
2,105 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA10-E3/51BRIDGE RECT 1PHASE 1KV 3A GBL Vishay General Semiconductor - Diodes Division |
3,404 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 1 kV | 3 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA005-E3/45BRIDGE RECT 1PHASE 50V 3A GBL Vishay General Semiconductor - Diodes Division |
2,706 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 50 V | 3 A | 1.1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA01-E3/45BRIDGE RECT 1PHASE 100V 3A GBL Vishay General Semiconductor - Diodes Division |
3,317 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 100 V | 3 A | 1.1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA02-E3/45BRIDGE RECT 1PHASE 200V 3A GBL Vishay General Semiconductor - Diodes Division |
2,468 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Avalanche | 200 V | 3 A | 1.1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA04-E3/45BRIDGE RECT 1PHASE 400V 3A GBL Vishay General Semiconductor - Diodes Division |
2,388 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 400 V | 3 A | 1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA06-E3/45BRIDGE RECT 1PHASE 600V 3A GBL Vishay General Semiconductor - Diodes Division |
2,537 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 3 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA08-E3/45BRIDGE RECT 1PHASE 800V 3A GBL Vishay General Semiconductor - Diodes Division |
3,522 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 3 A | 1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBLA10-E3/45BRIDGE RECT 1PHASE 1KV 3A GBL Vishay General Semiconductor - Diodes Division |
3,999 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 1 kV | 3 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBL005-E3/51BRIDGE RECT 1PHASE 50V 3A GBL Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 50 V | 3 A | 1.1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBL005-E3/45BRIDGE RECT 1PHASE 50V 3A GBL Vishay General Semiconductor - Diodes Division |
3,623 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 50 V | 3 A | 1.1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
|
GBL04-E3/45BRIDGE RECT 1PHASE 400V 3A GBL Vishay General Semiconductor - Diodes Division |
3,660 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 400 V | 3 A | 1.1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBLA06-M3/51BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division |
3,146 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 4 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBLA08-M3/51BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division |
3,160 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 4 A | 1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBLA10-M3/51BRIDGE RECT 1PHASE 1KV 4A GBL Vishay General Semiconductor - Diodes Division |
2,364 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 1 kV | 4 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBLA06-M3/45BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division |
2,340 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 4 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBLA08-M3/45BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division |
2,606 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 4 A | 1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL |