Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
GBU4J-M3/45BRIDGE RECT 1PHASE 600V 4A GBU Vishay General Semiconductor - Diodes Division |
2,992 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 4 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU4K-M3/45BRIDGE RECT 1PHASE 800V 4A GBU Vishay General Semiconductor - Diodes Division |
3,213 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 4 A | 1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU4M-M3/45BRIDGE RECT 1PHASE 1KV 4A GBU Vishay General Semiconductor - Diodes Division |
3,090 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 1 kV | 4 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6A-M3/51BRIDGE RECT 1PHASE 50V 3.8A GBU Vishay General Semiconductor - Diodes Division |
2,327 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 50 V | 3.8 A | 1 V @ 6 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU8A-M3/51BRIDGE RECT 1PHASE 50V 3.9A GBU Vishay General Semiconductor - Diodes Division |
3,423 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 50 V | 3.9 A | 1 V @ 8 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6B-M3/51BRIDGE RECT 1PHASE 100V 6A GBU Vishay General Semiconductor - Diodes Division |
2,131 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 100 V | 6 A | 1 V @ 6 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6D-M3/51BRIDGE RECT 1PHASE 200V 6A GBU Vishay General Semiconductor - Diodes Division |
2,388 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 200 V | 6 A | 1 V @ 3 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6G-M3/51BRIDGE RECT 1PHASE 400V 6A GBU Vishay General Semiconductor - Diodes Division |
3,547 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 400 V | 6 A | 1 V @ 6 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6J-M3/51BRIDGE RECT 1PHASE 600V 6A GBU Vishay General Semiconductor - Diodes Division |
2,569 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 6 A | 1 V @ 6 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6K-M3/51BRIDGE RECT 1PHASE 800V 6A GBU Vishay General Semiconductor - Diodes Division |
2,205 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 6 A | 1 V @ 6 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU6M-M3/51BRIDGE RECT 1PHASE 1KV 6A GBU Vishay General Semiconductor - Diodes Division |
3,318 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 1 kV | 6 A | 1 V @ 6 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU8B-M3/51BRIDGE RECT 1PHASE 100V 8A GBU Vishay General Semiconductor - Diodes Division |
3,974 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 100 V | 8 A | 1 V @ 8 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU8D-M3/51BRIDGE RECT 1PHASE 200V 8A GBU Vishay General Semiconductor - Diodes Division |
3,919 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 200 V | 8 A | 1 V @ 8 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU8G-M3/51BRIDGE RECT 1PHASE 400V 8A GBU Vishay General Semiconductor - Diodes Division |
3,670 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 400 V | 8 A | 1 V @ 8 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU8J-M3/51BRIDGE RECT 1PHASE 600V 8A GBU Vishay General Semiconductor - Diodes Division |
2,593 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 8 A | 1 V @ 8 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
|
BU1006-E3/51BRIDGE RECT 1P 600V 3.2A BU Vishay General Semiconductor - Diodes Division |
3,957 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 3.2 A | 1.05 V @ 5 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU1008-E3/51BRIDGE RECT 1P 800V 3.2A BU Vishay General Semiconductor - Diodes Division |
2,005 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 800 V | 3.2 A | 1.05 V @ 5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
|
BU1210-E3/51BRIDGE RECT 1P 1KV 3.4A BU Vishay General Semiconductor - Diodes Division |
2,152 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 1 kV | 3.4 A | 1.05 V @ 6 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
![]() |
GBU6G-E3/51BRIDGE RECT 1PHASE 400V 3.8A GBU Vishay General Semiconductor - Diodes Division |
3,999 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 400 V | 3.8 A | 1 V @ 6 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
GBU8K-M3/51BRIDGE RECT 1PHASE 800V 8A GBU Vishay General Semiconductor - Diodes Division |
3,336 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 8 A | 1 V @ 8 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU |