Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
G3SBA20-M3/45BRIDGE RECT 1PHASE 200V 2.3A GBU Vishay General Semiconductor - Diodes Division |
2,799 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 200 V | 2.3 A | 1 V @ 2 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
G3SBA20-M3/51BRIDGE RECT 1PHASE 200V 2.3A GBU Vishay General Semiconductor - Diodes Division |
2,215 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 200 V | 2.3 A | 1 V @ 2 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
G3SBA80-M3/45BRIDGE RECT 1PHASE 800V 2.3A GBU Vishay General Semiconductor - Diodes Division |
2,680 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 2.3 A | 1 V @ 2 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
G3SBA80-M3/51BRIDGE RECT 1PHASE 800V 2.3A GBU Vishay General Semiconductor - Diodes Division |
2,752 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 2.3 A | 1 V @ 2 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
VS-1KAB05ERECTIFIER BRIDGE 50V 1.5A D-38 Vishay General Semiconductor - Diodes Division |
3,796 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | |||||||
![]() |
GBL04-M3/454A 400V GPP INLINE BRIDGE Vishay General Semiconductor - Diodes Division |
3,967 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 400 V | 3 A | 1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL01-M3/51BRIDGE RECT 1PHASE 100V 4A GBL Vishay General Semiconductor - Diodes Division |
3,270 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 100 V | 4 A | 1.1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL02-M3/51BRIDGE RECT 1PHASE 200V 4A GBL Vishay General Semiconductor - Diodes Division |
2,452 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 200 V | 4 A | 1.1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL04-M3/51BRIDGE RECT 1PHASE 400V 4A GBL Vishay General Semiconductor - Diodes Division |
2,449 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 400 V | 4 A | 1.1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL06-M3/51BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division |
2,891 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 4 A | 1.1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL08-M3/51BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division |
3,105 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL10-M3/51BRIDGE RECT 1PHASE 1KV 4A GBL Vishay General Semiconductor - Diodes Division |
2,851 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL01-M3/45BRIDGE RECT 1PHASE 100V 4A GBL Vishay General Semiconductor - Diodes Division |
2,943 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 100 V | 4 A | 1.1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL02-M3/45BRIDGE RECT 1PHASE 200V 4A GBL Vishay General Semiconductor - Diodes Division |
2,162 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 200 V | 4 A | 1.1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL06-M3/45BRIDGE RECT 1PHASE 600V 4A GBL Vishay General Semiconductor - Diodes Division |
3,980 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 4 A | 1.1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL08-M3/45BRIDGE RECT 1PHASE 800V 4A GBL Vishay General Semiconductor - Diodes Division |
3,414 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 800 V | 4 A | 1 V @ 2 A | 10 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
GBL10-M3/45BRIDGE RECT 1PHASE 1KV 4A GBL Vishay General Semiconductor - Diodes Division |
3,132 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 1 kV | 4 A | 1.1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBL | ||||||
![]() |
G3SBA60-M3/45BRIDGE RECT 1PHASE 600V 2.3A GBU Vishay General Semiconductor - Diodes Division |
3,593 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 600 V | 2.3 A | 1 V @ 2 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
G3SBA60-M3/51BRIDGE RECT 1PHASE 600V 2.3A GBU Vishay General Semiconductor - Diodes Division |
2,721 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 2.3 A | 1 V @ 2 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
![]() |
VS-2KBB05RECTIFIER BRIDGE 50V 1.9A D-37 Vishay General Semiconductor - Diodes Division |
3,762 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - |