Диоды - мостовые выпрямители

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
VS-2KBB80

VS-2KBB80

RECTIFIER BRIDGE 800V 1.9A D-37

Vishay General Semiconductor - Diodes Division
2,043 -

RFQ

Tube * Active - - - - - - - - -
G5SBA20-M3/51

G5SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,147 -

RFQ

G5SBA20-M3/51

Технические

Tray - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/51

G5SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,469 -

RFQ

G5SBA60-M3/51

Технические

Tray - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/51

G5SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,905 -

RFQ

G5SBA80-M3/51

Технические

Tray - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
3,116 -

RFQ

BU1006A-E3/51

Технические

Bulk - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
3,867 -

RFQ

BU1008A-E3/51

Технические

Tray - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU4B-E3/45

GBU4B-E3/45

BRIDGE RECT 1PHASE 100V 3A GBU

Vishay General Semiconductor - Diodes Division
2,336 -

RFQ

GBU4B-E3/45

Технические

Tube - Active Single Phase Standard 100 V 3 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-E3/45

GBU4M-E3/45

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division
3,717 -

RFQ

GBU4M-E3/45

Технические

Tube - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1010-E3/51

BU1010-E3/51

BRIDGE RECT 1P 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division
2,001 -

RFQ

BU1010-E3/51

Технические

Bulk - Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU4A-M3/51

GBU4A-M3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
2,349 -

RFQ

GBU4A-M3/51

Технические

Tray - Active Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B-M3/51

GBU4B-M3/51

BRIDGE RECT 1PHASE 100V 4A GBU

Vishay General Semiconductor - Diodes Division
2,461 -

RFQ

GBU4B-M3/51

Технические

Tray - Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-M3/51

GBU4D-M3/51

BRIDGE RECT 1PHASE 200V 4A GBU

Vishay General Semiconductor - Diodes Division
3,256 -

RFQ

GBU4D-M3/51

Технические

Tray - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-M3/51

GBU4G-M3/51

BRIDGE RECT 1PHASE 400V 4A GBU

Vishay General Semiconductor - Diodes Division
2,899 -

RFQ

GBU4G-M3/51

Технические

Tray - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4J-M3/51

GBU4J-M3/51

BRIDGE RECT 1PHASE 600V 4A GBU

Vishay General Semiconductor - Diodes Division
2,725 -

RFQ

GBU4J-M3/51

Технические

Tray - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4K-M3/51

GBU4K-M3/51

BRIDGE RECT 1PHASE 800V 4A GBU

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

GBU4K-M3/51

Технические

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-M3/51

GBU4M-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBU

Vishay General Semiconductor - Diodes Division
2,475 -

RFQ

GBU4M-M3/51

Технические

Tray - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A-M3/45

GBU4A-M3/45

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
3,585 -

RFQ

GBU4A-M3/45

Технические

Tube - Active Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B-M3/45

GBU4B-M3/45

BRIDGE RECT 1PHASE 100V 4A GBU

Vishay General Semiconductor - Diodes Division
2,501 -

RFQ

GBU4B-M3/45

Технические

Tube - Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-M3/45

GBU4D-M3/45

BRIDGE RECT 1PHASE 200V 4A GBU

Vishay General Semiconductor - Diodes Division
3,751 -

RFQ

GBU4D-M3/45

Технические

Tube - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-M3/45

GBU4G-M3/45

BRIDGE RECT 1PHASE 400V 4A GBU

Vishay General Semiconductor - Diodes Division
3,249 -

RFQ

GBU4G-M3/45

Технические

Tube - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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