Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | DiodeType | Technology | Voltage-PeakReverse(Max) | Current-AverageRectified(Io) | Voltage-Forward(Vf)(Max)@If | Current-ReverseLeakage@Vr | OperatingTemperature | MountingType | VRRM(V) | I(AV)(A) | IFSM(A) | VF@IF(V) | VF@IF(A) | IR(μA) | Trr(ns) |
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VS-2KBB80RECTIFIER BRIDGE 800V 1.9A D-37 Vishay General Semiconductor - Diodes Division |
2,043 | - |
RFQ |
Tube | * | Active | - | - | - | - | - | - | - | - | - | |||||||
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G5SBA20-M3/51BRIDGE RECT 1PHASE 200V 2.8A GBU Vishay General Semiconductor - Diodes Division |
3,147 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 200 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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G5SBA60-M3/51BRIDGE RECT 1PHASE 600V 2.8A GBU Vishay General Semiconductor - Diodes Division |
3,469 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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G5SBA80-M3/51BRIDGE RECT 1PHASE 800V 2.8A GBU Vishay General Semiconductor - Diodes Division |
3,905 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 2.8 A | 1.05 V @ 3 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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BU1006A-E3/51BRIDGE RECT 1P 600V 3A BU Vishay General Semiconductor - Diodes Division |
3,116 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 600 V | 3 A | 1.1 V @ 5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
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BU1008A-E3/51BRIDGE RECT 1P 800V 3A BU Vishay General Semiconductor - Diodes Division |
3,867 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 3 A | 1.1 V @ 5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
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GBU4B-E3/45BRIDGE RECT 1PHASE 100V 3A GBU Vishay General Semiconductor - Diodes Division |
2,336 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 100 V | 3 A | 1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4M-E3/45BRIDGE RECT 1PHASE 1KV 3A GBU Vishay General Semiconductor - Diodes Division |
3,717 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 1 kV | 3 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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BU1010-E3/51BRIDGE RECT 1P 1KV 3.2A BU Vishay General Semiconductor - Diodes Division |
2,001 | - |
RFQ |
![]() Технические |
Bulk | - | Active | Single Phase | Standard | 1 kV | 3.2 A | 1.05 V @ 5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, BU | ||||||
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GBU4A-M3/51BRIDGE RECT 1PHASE 50V 3A GBU Vishay General Semiconductor - Diodes Division |
2,349 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 50 V | 3 A | 1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4B-M3/51BRIDGE RECT 1PHASE 100V 4A GBU Vishay General Semiconductor - Diodes Division |
2,461 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 100 V | 4 A | 1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4D-M3/51BRIDGE RECT 1PHASE 200V 4A GBU Vishay General Semiconductor - Diodes Division |
3,256 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 200 V | 4 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4G-M3/51BRIDGE RECT 1PHASE 400V 4A GBU Vishay General Semiconductor - Diodes Division |
2,899 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 400 V | 4 A | 1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4J-M3/51BRIDGE RECT 1PHASE 600V 4A GBU Vishay General Semiconductor - Diodes Division |
2,725 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 600 V | 4 A | 1 V @ 4 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4K-M3/51BRIDGE RECT 1PHASE 800V 4A GBU Vishay General Semiconductor - Diodes Division |
2,930 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 800 V | 4 A | 1 V @ 4 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4M-M3/51BRIDGE RECT 1PHASE 1KV 4A GBU Vishay General Semiconductor - Diodes Division |
2,475 | - |
RFQ |
![]() Технические |
Tray | - | Active | Single Phase | Standard | 1 kV | 4 A | 1 V @ 4 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4A-M3/45BRIDGE RECT 1PHASE 50V 3A GBU Vishay General Semiconductor - Diodes Division |
3,585 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 50 V | 3 A | 1 V @ 4 A | 5 µA @ 50 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4B-M3/45BRIDGE RECT 1PHASE 100V 4A GBU Vishay General Semiconductor - Diodes Division |
2,501 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 100 V | 4 A | 1 V @ 4 A | 5 µA @ 100 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4D-M3/45BRIDGE RECT 1PHASE 200V 4A GBU Vishay General Semiconductor - Diodes Division |
3,751 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 200 V | 4 A | 1 V @ 4 A | 5 µA @ 200 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU | ||||||
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GBU4G-M3/45BRIDGE RECT 1PHASE 400V 4A GBU Vishay General Semiconductor - Diodes Division |
3,249 | - |
RFQ |
![]() Технические |
Tube | - | Active | Single Phase | Standard | 400 V | 4 A | 1 V @ 4 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | Through Hole | 4-SIP, GBU |