Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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2N6756N-CHANNEL POWER MOSFET Harris Corporation |
3,582 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | 10V | 210mOhm @ 14A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | - | - | 4W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2N6767N-CHANNEL POWER MOSFET Harris Corporation |
3,097 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 12A (Tc) | 10V | 400mOhm @ 7.75A, 10V | 4V @ 1mA | - | ±20V | 3000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2N6760N-CHANNEL POWER MOSFET Harris Corporation |
3,527 | - |
RFQ |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 5.5A (Tc) | 10V | 1.22Ohm @ 5.5A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±20V | - | - | 4W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | |
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2N6761N-CHANNEL POWER MOSFET Harris Corporation |
3,615 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 4A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF122N-CHANNEL POWER MOSFET Harris Corporation |
3,958 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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2N6786N-CHANNEL POWER MOSFET Harris Corporation |
3,895 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.25A (Tc) | 10V | 3.7Ohm @ 1.25A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 170 pF @ 25 V | - | 15W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF341N-CHANNEL POWER MOSFET Harris Corporation |
3,892 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 10A (Tc) | 10V | 550mOhm @ 5.2A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF442N-CHANNEL POWER MOSFET Harris Corporation |
3,754 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 7A (Tc) | 10V | 1.1Ohm @ 4.4A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1225 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF640RN-CHANNEL POWER MOSFET Harris Corporation |
3,253 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF453N-CHANNEL POWER MOSFET Harris Corporation |
3,974 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 7.2A (Tc) | 10V | 500mOhm @ 7.2A, 10V | 4V @ 250µA | 130 nC @ 10 V | ±20V | 1800 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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2N7224JANTXVNPN POWER TRANSISTOR Harris Corporation |
3,230 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 34A (Tc) | 10V | 81mOhm @ 34A, 10V | 4V @ 250µA | 125 nC @ 10 V | ±20V | - | - | 4W (Ta), 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF710RN-CHANNEL POWER MOSFET Harris Corporation |
3,451 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 2A (Tc) | 10V | 3.6Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF612N-CHANNEL POWER MOSFET Harris Corporation |
2,569 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 2.4Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF633N-CHANNEL POWER MOSFET Harris Corporation |
3,366 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 8A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF712N-CHANNEL POWER MOSFET Harris Corporation |
3,836 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 5Ohm @ 1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF740RN-CHANNEL POWER MOSFET Harris Corporation |
2,843 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 10A (Tc) | 10V | 550mOhm @ 5.2A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF9511P-CHANNEL POWER MOSFET Harris Corporation |
2,496 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 3A (Tc) | 10V | 1.2Ohm @ 1.5A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF9621P-CHANNEL POWER MOSFET Harris Corporation |
3,049 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFD122SMALL SIGNAL N-CHANNEL MOSFET Harris Corporation |
2,032 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 1.1A (Tc) | 10V | 400mOhm @ 600mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFBC40RN-CHANNEL POWER MOSFET Harris Corporation |
3,162 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.2A (Tc) | 10V | 1.2Ohm @ 3.4A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |