Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BUZ42N-CHANNEL POWER MOSFET Harris Corporation |
2,864 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4A (Tc) | 10V | 2Ohm @ 2.5A, 10V | 4V @ 1mA | - | ±20V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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HUF75344P3MOSFET N-CH 55V 75A TO220-3 Harris Corporation |
2,562 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 8mOhm @ 75A, 10V | 4V @ 250µA | 210 nC @ 20 V | ±20V | 3200 pF @ 25 V | - | 285W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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HUF75332S3STMOSFET N-CH 55V 60A D2PAK Harris Corporation |
2,250 | - |
RFQ |
![]() Технические |
Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 60A (Tc) | 10V | 19mOhm @ 60A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 145W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF9633P-CHANNEL POWER MOSFET Harris Corporation |
3,132 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 5.5A (Tc) | 10V | 1.2Ohm @ 3.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFF433N-CHANNEL POWER MOSFET Harris Corporation |
3,889 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 2.25A (Tc) | 10V | 2Ohm @ 1.5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF233N-CHANNEL POWER MOSFET Harris Corporation |
3,512 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 8A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF721RN-CHANNEL POWER MOSFET Harris Corporation |
2,701 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 3.3A (Ta) | 10V | 1.8Ohm @ 1.8A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP6P08P-CHANNEL POWER MOSFET Harris Corporation |
2,051 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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RFG45N06LE45A, 60V, 0.028OHM, N-CHANNEL Harris Corporation |
3,562 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 5V | 28mOhm @ 45A, 5V | 2V @ 250µA | 135 nC @ 10 V | ±10V | 2150 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | |
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IRF232N-CHANNEL POWER MOSFET Harris Corporation |
3,231 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 8A (Tc) | 10V | 600mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFG50N06LEN-CHANNEL POWER MOSFET Harris Corporation |
2,462 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 5V | 22mOhm @ 50A, 5V | 2V @ 250µA | 120 nC @ 10 V | ±10V | 2100 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF645N-CHANNEL POWER MOSFET Harris Corporation |
2,917 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 13A (Tc) | 10V | 340mOhm @ 8A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF743N-CHANNEL POWER MOSFET Harris Corporation |
3,000 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 8A (Tc) | 10V | 800mOhm @ 5.2A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±20V | 1250 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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HUF75329P3MOSFET N-CH 55V 49A TO220-3 Harris Corporation |
2,605 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 49A (Tc) | 10V | 24mOhm @ 49A, 10V | 4V @ 250µA | 75 nC @ 20 V | ±20V | 1060 pF @ 25 V | - | 128W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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HUF75321S3SMOSFET N-CH 55V 35A D2PAK Harris Corporation |
3,434 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 35A (Tc) | 10V | 34mOhm @ 35A, 10V | 4V @ 250µA | 44 nC @ 20 V | ±20V | 680 pF @ 25 V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF230MOSFET N-CH 200V 9A TO3 Harris Corporation |
2,624 | - |
RFQ |
![]() Технические |
Bag | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9A (Tc) | - | 400mOhm @ 5A, 10V | 4V @ 250µA | 30 nC @ 10 V | ±20V | 600 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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HUF75333S3STMOSFET N-CH 55V 66A D2PAK Harris Corporation |
3,435 | - |
RFQ |
Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 66A (Tc) | 10V | 16mOhm @ 66A, 10V | 4V @ 250µA | 85 nC @ 20 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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HUF75309D3SMOSFET N-CH 55V 19A DPAK Harris Corporation |
2,400 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 70mOhm @ 19A, 10V | 4V @ 250µA | 24 nC @ 20 V | ±20V | 350 pF @ 25 V | - | 55W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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HUF76629D3SMOSFET N-CH 100V 20A TO252AA Harris Corporation |
2,766 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 4.5V, 10V | 52mOhm @ 20A, 10V | 3V @ 250µA | 46 nC @ 10 V | ±16V | 1285 pF @ 25 V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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IRF624MOSFET N-CH 250V 4.4A TO220AB Harris Corporation |
3,852 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 4.4A (Tc) | 10V | 1.1Ohm @ 2.6A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |