Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUZ42

BUZ42

N-CHANNEL POWER MOSFET

Harris Corporation
2,864 -

RFQ

BUZ42

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 500 V 4A (Tc) 10V 2Ohm @ 2.5A, 10V 4V @ 1mA - ±20V 2000 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75344P3

HUF75344P3

MOSFET N-CH 55V 75A TO220-3

Harris Corporation
2,562 -

RFQ

HUF75344P3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 20 V ±20V 3200 pF @ 25 V - 285W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75332S3ST

HUF75332S3ST

MOSFET N-CH 55V 60A D2PAK

Harris Corporation
2,250 -

RFQ

HUF75332S3ST

Технические

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9633

IRF9633

P-CHANNEL POWER MOSFET

Harris Corporation
3,132 -

RFQ

IRF9633

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 150 V 5.5A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 550 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF433

IRFF433

N-CHANNEL POWER MOSFET

Harris Corporation
3,889 -

RFQ

IRFF433

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 2.25A (Tc) 10V 2Ohm @ 1.5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF233

IRF233

N-CHANNEL POWER MOSFET

Harris Corporation
3,512 -

RFQ

IRF233

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF721R

IRF721R

N-CHANNEL POWER MOSFET

Harris Corporation
2,701 -

RFQ

IRF721R

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 3.3A (Ta) 10V 1.8Ohm @ 1.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP6P08

RFP6P08

P-CHANNEL POWER MOSFET

Harris Corporation
2,051 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RFG45N06LE

RFG45N06LE

45A, 60V, 0.028OHM, N-CHANNEL

Harris Corporation
3,562 -

RFQ

RFG45N06LE

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 5V 28mOhm @ 45A, 5V 2V @ 250µA 135 nC @ 10 V ±10V 2150 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ)
IRF232

IRF232

N-CHANNEL POWER MOSFET

Harris Corporation
3,231 -

RFQ

IRF232

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 8A (Tc) 10V 600mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFG50N06LE

RFG50N06LE

N-CHANNEL POWER MOSFET

Harris Corporation
2,462 -

RFQ

RFG50N06LE

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 5V 22mOhm @ 50A, 5V 2V @ 250µA 120 nC @ 10 V ±10V 2100 pF @ 25 V - 142W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF645

IRF645

N-CHANNEL POWER MOSFET

Harris Corporation
2,917 -

RFQ

IRF645

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 13A (Tc) 10V 340mOhm @ 8A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF743

IRF743

N-CHANNEL POWER MOSFET

Harris Corporation
3,000 -

RFQ

IRF743

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 8A (Tc) 10V 800mOhm @ 5.2A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1250 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75329P3

HUF75329P3

MOSFET N-CH 55V 49A TO220-3

Harris Corporation
2,605 -

RFQ

HUF75329P3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 49A (Tc) 10V 24mOhm @ 49A, 10V 4V @ 250µA 75 nC @ 20 V ±20V 1060 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ) Through Hole
HUF75321S3S

HUF75321S3S

MOSFET N-CH 55V 35A D2PAK

Harris Corporation
3,434 -

RFQ

HUF75321S3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 35A (Tc) 10V 34mOhm @ 35A, 10V 4V @ 250µA 44 nC @ 20 V ±20V 680 pF @ 25 V - 93W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF230

IRF230

MOSFET N-CH 200V 9A TO3

Harris Corporation
2,624 -

RFQ

IRF230

Технические

Bag - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) - 400mOhm @ 5A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75333S3ST

HUF75333S3ST

MOSFET N-CH 55V 66A D2PAK

Harris Corporation
3,435 -

RFQ

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) 10V 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF75309D3S

HUF75309D3S

MOSFET N-CH 55V 19A DPAK

Harris Corporation
2,400 -

RFQ

HUF75309D3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 70mOhm @ 19A, 10V 4V @ 250µA 24 nC @ 20 V ±20V 350 pF @ 25 V - 55W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76629D3S

HUF76629D3S

MOSFET N-CH 100V 20A TO252AA

Harris Corporation
2,766 -

RFQ

HUF76629D3S

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 20A (Tc) 4.5V, 10V 52mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1285 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF624

IRF624

MOSFET N-CH 250V 4.4A TO220AB

Harris Corporation
3,852 -

RFQ

IRF624

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) 10V 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
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