Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF6205.0A 200V 0.800 OHM N-CHANNEL Harris Corporation |
3,490 | - |
RFQ |
![]() Технические |
Bulk | PowerMESH™ II | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 6A (Tc) | 10V | 800mOhm @ 3A, 10V | 4V @ 250µA | 27 nC @ 10 V | ±20V | 350 pF @ 25 V | - | 70W (Tc) | -65°C ~ 150°C (TJ) | Through Hole |
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HUF75309D3N-CHANNEL POWER MOSFET Harris Corporation |
2,082 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 17A (Tc) | - | 70mOhm @ 17A, 10V | 4V @ 250µA | 24 nC @ 20 V | ±20V | 350 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF623N-CHANNEL POWER MOSFET Harris Corporation |
3,564 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 4A (Tc) | 10V | 1.2Ohm @ 2.5A, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 450 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFD14N05LMOSFET N-CH 50V 14A IPAK Harris Corporation |
3,529 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 50 V | 14A (Tc) | 5V | 100mOhm @ 14A, 5V | 2V @ 250µA | 40 nC @ 10 V | ±10V | 670 pF @ 25 V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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HUF75307D3STMOSFET N-CH 55V 15A TO252 Harris Corporation |
3,201 | - |
RFQ |
Bulk | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 15A (Tc) | - | 90mOhm @ 13A, 10V | 4V @ 250µA | 20 nC @ 20 V | ±20V | 250 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | |
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IRF821N-CHANNEL POWER MOSFET Harris Corporation |
2,280 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 2.5A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF614ADVANCED POWER MOSFET Harris Corporation |
2,943 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.7A (Tc) | 10V | 2Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF822RN-CHANNEL POWER MOSFET Harris Corporation |
2,771 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.2A (Tc) | 10V | 4Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP4N35N-CHANNEL POWER MOSFET Harris Corporation |
3,485 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4V @ 1mA | - | ±20V | 750 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF712RN-CHANNEL POWER MOSFET Harris Corporation |
2,784 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 1.7A (Tc) | 10V | 5Ohm @1.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFU420MOSFET N-CH 500V 2.4A TO251AA Harris Corporation |
3,769 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 2.4A (Tc) | - | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19 nC @ 10 V | ±20V | 360 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF530MOSFET N-CH 100V 14A TO220AB Harris Corporation |
3,590 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 14A (Tc) | - | 180mOhm @ 8A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP3N45N-CHANNEL POWER MOSFET Harris Corporation |
3,942 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±20V | 750 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP4N40N-CHANNEL POWER MOSFET Harris Corporation |
3,151 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 4A (Tc) | 10V | 2Ohm @ 2A, 10V | 4V @ 1mA | - | ±20V | 750 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFF323N-CHANNEL POWER MOSFET Harris Corporation |
3,194 | - |
RFQ |
Bulk | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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IRFF321N-CHANNEL POWER MOSFET Harris Corporation |
3,096 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 2.5A (Tc) | 10V | 1.8Ohm @ 1.25A, 10V | 4V @ 250µA | 15 nC @ 10 V | 20V | 450 pF @ 25 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFR220MOSFET N-CH 200V 4.6A TO252AA Harris Corporation |
2,773 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.6A (Tc) | - | 800mOhm @ 2.4A, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 330 pF @ 25 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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IRF611N-CHANNEL POWER MOSFET Harris Corporation |
3,375 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 3.3A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 135 pF @ 25 V | - | 43W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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BUZ32MOSFET N-CH 200V 9.5A TO220AB Harris Corporation |
3,991 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 9.5A (Tc) | - | 400mOhm @ 4.5A, 10V | 4V @ 1mA | - | ±20V | 2000 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF9531MOSFET P-CH 60V 12A TO220AB Harris Corporation |
2,751 | - |
RFQ |
![]() Технические |
Bulk | - | Obsolete | P-Channel | MOSFET (Metal Oxide) | 60 V | 12A | - | - | - | - | ±320V | - | - | 75W | -55°C ~ 150°C | Through Hole |