Фото: | Мфр. Часть # | Доступность | Цена | Количество | Технические | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFP340MOSFET N-CH 400V 11A TO247-3 Harris Corporation |
1,224 | - |
RFQ |
![]() Технические |
Tube | - | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 11A (Tc) | 10V | 550mOhm @ 6.6A, 10V | 4V @ 250µA | 62 nC @ 10 V | ±20V | 1400 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S64018A, 200V, 0.180 OHM, N-CHANNEL Harris Corporation |
3,985 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 18A (Tc) | 10V | 180mOhm @ 10A, 10V | 4V @ 250µA | 64 nC @ 10 V | ±20V | 1275 pF @ 25 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFD323N-CHANNEL POWER MOSFET Harris Corporation |
982 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 350 V | 400mA (Tc) | 10V | 2.5Ohm @ 250mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 455 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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HUF75639S3MOSFET N-CH 100V 56A I2PAK Harris Corporation |
5,937 | - |
RFQ |
![]() Технические |
Tube | UltraFET™ | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF9632P-CHANNEL POWER MOSFET Harris Corporation |
455 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 200 V | 5.5A (Tc) | 10V | 1.2Ohm @ 3.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 550 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFP245N-CHANNEL POWER MOSFET Harris Corporation |
400 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 14A (Tc) | 10V | 340mOhm @ 10A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF541N-CHANNEL POWER MOSFET Harris Corporation |
4,100 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 28A (Tc) | 10V | 77mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRF542N-CHANNEL POWER MOSFET Harris Corporation |
7,679 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A (Tc) | 10V | 100mOhm @ 17A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1450 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFP246N-CHANNEL POWER MOSFET Harris Corporation |
5,674 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 275 V | 15A (Tc) | 10V | 280mOhm @ 10A, 10V | 4V @ 250µA | 59 nC @ 10 V | ±20V | 1300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RF1S70N03MOSFET N-CH 30V 70A TO262AA Harris Corporation |
789 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 70A (Tc) | - | 10mOhm @ 70A, 10V | 4V @ 250µA | 260 nC @ 20 V | ±20V | 3300 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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IRFF9232P-CHANNEL POWER MOSFET Harris Corporation |
582 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 3.5A (Tc) | - | - | - | - | - | - | - | 25W | - | Through Hole |
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RFM12P08P-CHANNEL POWER MOSFET Harris Corporation |
358 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 4V @ 1mA | - | ±20V | 1500 pF @ 25 V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFL1N15N-CHANNEL POWER MOSFET Harris Corporation |
4,903 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 1A (Tc) | 10V | 1.9Ohm @ 1A, 10V | 4V @ 250µA | - | ±20V | 200 pF @ 25 V | - | 8.33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFP6N45N-CHANNEL POWER MOSFET Harris Corporation |
210 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 6A (Tc) | 10V | 1.25Ohm @ 3A, 10V | 4V @ 1mA | - | ±20V | 1500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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RFM6P10P-CHANNEL POWER MOSFET Harris Corporation |
3,064 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | 10V | 600mOhm @ 6A, 10V | 4V @ 250µA | - | ±20V | 800 pF @ 25 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRFD322N-CHANNEL POWER MOSFET Harris Corporation |
1,111 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 400mA (Tc) | 10V | 2.5Ohm @ 250mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 455 pF @ 25 V | - | 1W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF151N-CHANNEL POWER MOSFET Harris Corporation |
512 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 40A (Tc) | 10V | 55mOhm @ 20A, 10V | 4V @ 250µA | 120 nC @ 10 V | ±20V | 2000 pF @ 25 V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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IRF9542P-CHANNEL POWER MOSFET Harris Corporation |
497 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 10V | 300mOhm @ 10A, 10V | 4V @ 250µA | 90 nC @ 10 V | ±20V | 1100 pF @ 25 V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole |
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RF1S4N100SM9AMOSFET N-CH 1000V 4.3A TO263AB Harris Corporation |
187 | - |
RFQ |
![]() Технические |
Bulk | - | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 4.3A (Tc) | - | 3.5Ohm @ 2.5A, 10V | 4V @ 250µA | - | ±20V | - | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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RF1S9530-12A, -100V, 0.3 OHM, P-CHANNEL Harris Corporation |
5,418 | - |
RFQ |
![]() Технические |
Bulk | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A (Tc) | 10V | 300mOhm @ 6.5A, 10V | 4V @ 250µA | 45 nC @ 10 V | ±20V | 500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |