Транзисторы - FET, MOSFET - одиночные

Фото: Мфр. Часть # Доступность Цена Количество Технические Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFP340

IRFP340

MOSFET N-CH 400V 11A TO247-3

Harris Corporation
1,224 -

RFQ

IRFP340

Технические

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11A (Tc) 10V 550mOhm @ 6.6A, 10V 4V @ 250µA 62 nC @ 10 V ±20V 1400 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S640

RF1S640

18A, 200V, 0.180 OHM, N-CHANNEL

Harris Corporation
3,985 -

RFQ

RF1S640

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 10A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1275 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD323

IRFD323

N-CHANNEL POWER MOSFET

Harris Corporation
982 -

RFQ

IRFD323

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75639S3

HUF75639S3

MOSFET N-CH 100V 56A I2PAK

Harris Corporation
5,937 -

RFQ

HUF75639S3

Технические

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 56A (Tc) 10V 25mOhm @ 56A, 10V 4V @ 250µA 130 nC @ 20 V ±20V 2000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9632

IRF9632

P-CHANNEL POWER MOSFET

Harris Corporation
455 -

RFQ

IRF9632

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 5.5A (Tc) 10V 1.2Ohm @ 3.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 550 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP245

IRFP245

N-CHANNEL POWER MOSFET

Harris Corporation
400 -

RFQ

IRFP245

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 340mOhm @ 10A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF541

IRF541

N-CHANNEL POWER MOSFET

Harris Corporation
4,100 -

RFQ

IRF541

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF542

IRF542

N-CHANNEL POWER MOSFET

Harris Corporation
7,679 -

RFQ

IRF542

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 10V 100mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP246

IRFP246

N-CHANNEL POWER MOSFET

Harris Corporation
5,674 -

RFQ

IRFP246

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 275 V 15A (Tc) 10V 280mOhm @ 10A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S70N03

RF1S70N03

MOSFET N-CH 30V 70A TO262AA

Harris Corporation
789 -

RFQ

RF1S70N03

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 70A (Tc) - 10mOhm @ 70A, 10V 4V @ 250µA 260 nC @ 20 V ±20V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFF9232

IRFF9232

P-CHANNEL POWER MOSFET

Harris Corporation
582 -

RFQ

IRFF9232

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - - - - - - - 25W - Through Hole
RFM12P08

RFM12P08

P-CHANNEL POWER MOSFET

Harris Corporation
358 -

RFQ

RFM12P08

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 80 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFL1N15

RFL1N15

N-CHANNEL POWER MOSFET

Harris Corporation
4,903 -

RFQ

RFL1N15

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP6N45

RFP6N45

N-CHANNEL POWER MOSFET

Harris Corporation
210 -

RFQ

RFP6N45

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFM6P10

RFM6P10

P-CHANNEL POWER MOSFET

Harris Corporation
3,064 -

RFQ

RFM6P10

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA - ±20V 800 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD322

IRFD322

N-CHANNEL POWER MOSFET

Harris Corporation
1,111 -

RFQ

IRFD322

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF151

IRF151

N-CHANNEL POWER MOSFET

Harris Corporation
512 -

RFQ

IRF151

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9542

IRF9542

P-CHANNEL POWER MOSFET

Harris Corporation
497 -

RFQ

IRF9542

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 300mOhm @ 10A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 1100 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
RF1S4N100SM9A

RF1S4N100SM9A

MOSFET N-CH 1000V 4.3A TO263AB

Harris Corporation
187 -

RFQ

RF1S4N100SM9A

Технические

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 4.3A (Tc) - 3.5Ohm @ 2.5A, 10V 4V @ 250µA - ±20V - - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RF1S9530

RF1S9530

-12A, -100V, 0.3 OHM, P-CHANNEL

Harris Corporation
5,418 -

RFQ

RF1S9530

Технические

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 6.5A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
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